Plasmon Enhanced Electron Drag and Terahertz Photoconductance in a Grating-gated Field-effect Transistor with Two-dimensional Electron Channel

The specific goal for the 1st year was to develop a physical model of the interaction between THz EM radiation and 2D electron channel of the grating-gated field-effect transistor. This physical model has been developed. The model predicts and allows to calculate photo induced dc correction to the sourse-drain voltage measured in experiment. Calculations demonstrate that dc photovoltage has resonant peaks at plasmon frequencies. Dependence of the peak positions, shape, and amplitude on the frequency, gate voltage, temperature, and FET geometry has been found. Distributions of the non-equilibrium electron density, electric fields, and currents in the 2D channel at resonance have been calculated. The results are in very good qualitative agreement with experiment. Plans for the coming year include numerical simulation of the dc photoresponce for various system designs in order to optimize device parameters and assess its potential as a THz detector. (a) Papers published in peer-reviewed journals (N/A for none) List of papers submitted or published that acknowledge ARO support during this reporting period. List the papers, including journal references, in the following categories: (b) Papers published in non-peer-reviewed journals or in conference proceedings (N/A for none) 0.00 Number of Papers published in peer-reviewed journals: Number of Papers published in non peer-reviewed journals: 1. G.R. Aizin, L.G. Mourokh, S.J. Allen, M.C. Wanke "Resonant Terahertz Photoresistance in Laterally Modulated Two-dimensional Electron Systems", presented at the 16th International Conference on Electronic Properties of Two-dimensional Systems (EP2DS-16), July 10-15, 2005, Albuquerque, NM USA. 2. G.R. Aizin, L.G. Mourokh, S.J. Allen, M.C. Wanke "Anomalous Temperature Dependence of the Resonant Terahertz Photoresistance in Laterally Modulated Two-dimensional Electron Systems", presented at the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-14), July 24-29, 2005, Chicago, IL USA. 3. G.R. Aizin, V.V. Popov, O.V. Polischuk "Plasmon resonances in the terahertz photoresponse of homogeneous 2D electron system with grating gate", accepted at 28th International Conference on the Physics of Semiconductors, Vienna, Austria, July 24-28, 2006 (c) Papers presented at meetings, but not published in conference proceedings (N/A for none) 0.00 Number of Papers not Published: G.R. Aizin, V.V. Popov, O.V. Polischuk "Plasmon enhanced electron drag and terahertz photoconductance in a grating-gated field-effect transistor with two-dimensional electron channel", to be submitted to Applied Physics letters (d) Manuscripts 3.00 Number of Manuscripts: 1.00 Number of Inventions: